Abstract
It is shown that for the n-InSb/YIG/GGG (YIG - yttrium iron garnet, GGG - gallium-gadolinium garnet) structure in the tangent to the substrate plane geometry of magnetization (H <10 kOe) at a temperature T≈300 K the magnetoresistance of about 1% is negative, while for n-InSb/GGG structure, in the same magnetization geometry, the magnetoresistance is positive (an increase in electrical resistance in a magnetic field). The negative magnetoresistance effect in the InSb/YIG/GGG structure is due to the influence of the YIG magnetization on the conduction electrons of InSb (proximity effect) and the magnitude of the effect is determined by the value of YIG magnetization and parameters of InSb films.
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