Abstract
The effect of anodic film formation conditions on the electrochemical behavior of Co2Si electrode in 0.5 M H2SO4 has been studied. It was shown that the rate of passive dissolution of Co2Si is only moderately greater than that of CoSi2 provided the Co2Si electrode passes through the active dissolution region very quickly. From the current decay curves at E = const, it was deduced that in the middle part of the passive region the oxide film on Co2Si grows according to near logarithmic law. Impedance spectra obtained in measurements at different initial electrode potentials were analyzed.
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Schedule a callMore From: Вестник Пермского университета. Серия «Химия» = Bulletin of Perm University. CHEMISTRY
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