Abstract
We propose a new image pixel architecture which has OFD(Over Flow Device) node by improving conventional 3TR pixel structure. Newly designed pixel consists of photo diode which is verified with HSPICE simulation, PMOS reset transistor, several NMOS and several PMOS transistors. Photodiode signals from each PMOS and NMOS are detected by Reset PMOS. These output signals give enough chances to detect wide operation coverage because OFD node has overflow photocurrent. According to various light intensity, we analyzed characteristic of the output voltage with a SPICE tool. Proposed pixel output has specific value which can detect possible from <TEX>$0.1{\mu}W/cm^2$</TEX> to <TEX>$10W/cm^2$</TEX> light intensity. It has wide-dynamic range of 160 dB.
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