Abstract
The processes of heating, melting and ablation during nanosecond laser irradiation of metal film (In) / CdTe structures and CdZnTe solid solutions are considered. Time and coordinate (in depth) temperature profiles during nanosecond laser irradiation of the system the film In/CdTe were calculated. Melting thresholds of indium and CdTe in the In/CdTe film system have been established. The profile of the distribution of indium atoms in cadmium telluride after a single laser irradiation of the In/CdTe structure, accompanied by the formation of an inversion layer (n-type), was obtained and theoretically described; a peak at a depth of 6 nm was detected. The mass transfer coefficients of indium in CdTe in different regions were determined during nanosecond laser irradiation of the In/CdTe structure with a thickness of the In film of 30 nm on the metal side at Epad = 100 mJ/cm2. It was established that the mass transfer coefficient of In atoms in CdTe during nanosecond laser irradiation of the In/CdTe film structure depends on the distance from the CdTe surface and increases, which is associated with a rapid change over time in the inhomogeneous deformation of the crystal lattice in the process of indium diffusion. The obtained value of the coefficient of laser-induced mass transfer of In in CdTe by an order of magnitude is much higher than the diffusion coefficients of impurities under normal annealing conditions with the diffusion method of impurity introduction and is commensurate with the self-diffusion coefficient in a number of liquid metals.
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