Самоорганізовані метал-напівпровідниковімікро-та наноструктуриAu-GaAs для застосування у плазмонній фотовольтаїці

Abstract

Au-GaAs metal-semiconductor composite microstructures have been prepared by an anisotropic etching of n-GaAs (100) wafers doped with Te (1016 to 1017 cm-3) with subsequent photostimulated chemical deposition of noble metal (Au) on formed semiconductor quasigratings. The microrelief topology of GaAs surface is controlled by the anisotropic etching conditions. Au metal was deposited on the structured GaAs surface as randomly placed nanoparticles of various shape and size and/or nanowires on the top of the hills of formed semiconductor microstructure. As the number of Au nanoparticles increases, they tend to localize on the ledges of the GaAs microrelief forming a system of approximately parallel nanowires. Obtained periodic structures with submicron to microns periods without Au nanoparticles and with deposited nanoparticles have been studied by means of scanning electron microscopy, optical spectroscopy (photoluminescence spectroscopy at room temperature), and photoelectric measurements. The decrease of the relative intensity of main photoluminescence band for samples with Au nanostructures compared to ones without nanoparticles deposition and simultaniously changes of the shape of photocurrent spectra of Au-GaAs microstructures have been observed. Such correlation in behaviour of measured spectra make formed Au-GaA metal-semiconductor microstructures perspective for the application in plasmonic photovoltaics.