Abstract
The possibility of using reagent-free modified water for preparing the GaAs surface in the process of creating microstrip structures with Au-GaAs contacts has been studied. It is shown that, compared with the well-known technique based on the use of deionized water, it is possible to significantly improve the quality of both rectifying and non-rectifying (ohmic) contacts obtained by the thermal evaporation of metals in vacuum. This is achieved by creating a layer of recrystallized gallium arsenide instead of a thin layer of natural oxide at the metal-semiconductor interface.
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