Abstract
AbstractThe results of experimental investigation into surface-defect formation under the effect of gamma-radiation with a dose rate P = 0.1 rad(Si)/s on MOS (metal-oxide-semiconductor) transistors with the n -type channel in the passive and active modes are presented. Two stages of surface-defect formation are observed. A qualitative model is proposed to explain the effect of the the drain transistor voltage on the defect formation process.
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