Abstract
We have successfully demonstrated of metal-insulator-semiconductor (MIS) capacitors with Al₂O₃/p-Si structures. The Al₂O₃ film was grown at 200 ℃ on H-terminated Si wafer by atomic layer deposition (ALD) system. Trimethylaluminum [Al(CH₃)₃, TMA] and H₂O were used as the aluminum and oxygen sources. A cycle of the deposition process consisted of 0.1 s of TMA pulse, 10 s of N₂ purge, 0.1 s of H₂O pulse, and 60 s of N₂ purge. The 5 nm thick Al₂O₃ layer prepared on Si substrate by ALD exhibited excellent electrical properties, including low leakage currents, no mobile charges, and a good interface with Si.
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