Abstract
AbstractThree-layer SrRuO_3/SrTiO_3/SrRuO_3 heterostructures were grown by laser evaporation on (110)LaAlO_3 substrates. Photolithography and ion etching are used to form plane-parallel film capacitors, in which a layer of strontium titanate is placed between two film electrodes of strontium ruthenate. Data on the structure and orientation of the intermediate SrTiO_3 layer in the grown heterostructures were obtained. The variation of the dielectric constant and dielectric loss of the SrTiO_3 intermediate layer upon varying the temperature and intensity of an external electric field was studied.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
