Сегнетоэлектрические материалы в современных вычислениях

Abstract

Background: Ferroelectric materials, known for their spontaneous electric polarization, are reshaping the landscape of modern computing. These materials have unique qualities, such as non-volatility, high-speed operation, and energy efficiency, which are critical for advancing modern computer technology. Objective: This study intends to investigate integrating ferroelectric materials into current computer systems, emphasizing to improve memory devices and processors and solve the accompanying technological obstacles and possibilities. Methods: A thorough analysis of existing literature and experimental data was carried out to determine the capabilities and limitations of ferroelectric materials in computing applications. Key performance indicators examined include polarization retention, energy consumption, scalability, and integration with existing semiconductor technology. Results: The results show that ferroelectric materials considerably increase memory device performance and efficiency by allowing quicker write/read operations and lowering power use. However, concerns such as material deterioration, data retention, and integration complexity with silicon-based technology remain. Conclusion: Ferroelectric materials provide exciting prospects for the next generation of computer technology. While they provide significant gains in memory and processing power, addressing the technological obstacles is critical to their effective adoption into mainstream computer applications. Further research and development are needed to solve these issues and fully realize the promise of ferroelectric materials in improving computer performance.