Теплоэлектрические процессы в многокристальных системах

Abstract

The paper shows results of studies of thermoelectric processes in multi-die systems, a particular case are power modules based on field-effect or bipolar transistors. For a complete description of such processes, it is necessary to know the thermal relations between all transistors of the module, characterized by a matrix of thermal impedances. To measure the elements of the matrix, it is proposed to use the modulation method based on heating each transistor of the module with a variable thermal power and measuring the temperature response to this effect of all other transistors. A thermal model of a multi-die system is also proposed, and based on the solution of the heat equation in the COMSOL Multiphysics environment, the temperature field is calculated on the substrate on which the dies are mounted. The simulation results are in good agreement with the experimental results, which indicates the adequacy of the thermal model.