Abstract
We succeeded in growing the flat Al2O3 film on the Cu-9%Al (111) single crystal surface over a large area using the improved cleaning process, that is, low Ar ion energy and short time sputtering, and investigated the surface morphology and natures of chemical bond of Al2O3 film on the Cu-9%Al by means of Auger electron spectroscopy (AES) and a scanning electron microscopy (SEM). The Al2O3 film surface prepared by this method was uniformly flat, and the maximum thickness was about 4.0 nm. The Al and O KLL Auger peaks from Al2O3 film shifted toward low kinetic energy, and the shift reflected to band bending in the Al203 film near interface.
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