Abstract
The influence of Si addition on the microstructure, mechanical properties and oxidation resistance of Ti-Al-Si-N was investigated using XRD, XPS, SEM and ultra-microindentaion. The composite targets consisting of a Ti50Al50 plate and Si chips were sputtered in a mixture of argon and nitrogen. Ti-Al-Si-N films were prepared in an r.f. sputtering apparatus of the Facing Target-type Sputtering. During the deposition, the substrate was heated from room temperature up to -573 K without substrate bias application. The total results of XRD, XPS and SEM revealed that the Ti-Al-Si-N films have a nano-composite structure consisting of nanocrystalline Ti-Al-N and an amorphous phase containing Si3N4. The highest hardness of 38 GPa was obtained for films with 3.5%Si. The films were subjected to an oxidation test, where they were exposed to a temperature in the range of 873 K to 1193 K for 1 ks. The hardness of Ti-Al-Si-N films hardly decreased after oxidation test up to 973 K, whereas the hardness of Ti-Al-N films decreased 7% at 973 K. Only a small TiO2 peak was observed for the Ti-Al-Si-N films oxidized at 973 K, whereas many TiO2 peaks were observed in the Ti-Al-N film. SEM & EDS observation revealed that the inside of the Ti-Al-Si-N film was not oxidized even after oxidation test at 1193 K. These improvements of Ti-Al-Si-N films could be attributed to the formation of nano-composite structure.
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