Abstract
Abstract The optical properties of amorphous nonstoichiometric silicon oxide (SiO_ x ) films of variable composition ( x = 0 . 62–1 . 92) formed by plasma-enhanced chemical vapor deposition are studied in the spectral range of 1 . 12–4 . 96 eV. Spectral ellipsometry showed that the refractive index dispersion character allows one to assign the formed SiO_ x films to silicon-like films, dielectrics, or intermediate-conductivity-type films depending on the content of oxygen in the gas phase during synthesis. A model of the SiO_ x structure for ab initio calculations is proposed and describes well the experimental optical spectra. Ab initio calculations of the dependences of the SiO_ x refractive index and band gap on stoichiometry parameter x are performed.
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