Изменение упругих деформаций в пленках SiC в процессе роста методом согласованного замещения атомов на подложках Si

Abstract

Sequential stages of synthesis of SiC epitaxial films on n- and p-type Si(111) substrates in a mixture of carbon monoxide and silane are studied by X-ray diffraction (XRD) and Raman scattering methods. It was found that the elastic strain in SiC films grown on n-type Si(111) is absent in contrast to SiC films grown on p-type Si(111), where the deformations are formed and completely relaxed by the 40th minute of synthesis. A dramatic change in the SiC film structure is observed on the third minute of the growth, which is associated with the formation and growth of pores in the SiC layer. Differences in the lattice constants of SiC films grown on p- and n-type Si substrates are determined and verified via analysis of the change in the curvature of SiC/Si wafers.