Abstract
PbSe thin films chemically deposited using ascorbic acid as an antioxidant for selenourea were examined by X -ray diffraction (XRD), scanning electron microscopy (SEM) with X -ray microanalysis (EDX) and X -ray photoelectron spectroscopy (XPS). Influence of annealing temperature on chemical and phase composition, lattice parameters, surface morphology and photoelectric properties were studied. Determined that PbSe thin films contain dopant phase PbSeO3, PbSeO4, PbI2 after annealing at 633−683K. The direct and indirect optical band gaps Eg layers were observed. It has been shown that the deposited films are comparable with known commercial samples by their threshold photoelectric characteristics and can be used to create highly sensitive IR detectors.
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