Abstract
Molybdenum disulfide is a crystalline material which attracts considerable attention due to explicit two-dimensional cha- racter of its electronic properties. To obtain MoS2 films thermally evaporated molybdenum and gaseous H2S were used as precursors in this work. As a result of chemical reaction of these precursors films consisting of flake-like of nanometer thickness assembled from parallel atomic layers with predominantly perpendicular (with respect to substrate surface) orientation were deposited on the surface of Si substrate. In this work we investigate the dependence of film morphology on deposition time, substrate temperature and concentration of precursors in gaseous phase. Presence of mono- and bi-layered structures in the film was revealed using Raman spectroscopy and electron microscopy. Dependence of photoluminescence properties on size of crystallites in produced films was also studied.
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