Abstract
In this work, low voltage MEMS variable capacitor was presented. Compare with other RF MEMS technologies, piezoelectric MEMS devices offer certain benefits such as low actuation voltage and fast moving, etc. The proposed structure consists of dual piezoelectric actuation bridges of in-plane polarized lead zirconate titanate (PZT) film to improve actuation voltage and reliability of devices. The PZT thin film, deposited on Au structural layer using RF magnetron sputtering method, was poled and driven with interdigitated electrodes(IDEs) to exploit dSUB33/SUB mode actuation. The in-plane polarized PZT films make it possible to develope dSUB33/SUB mode bending devices which lead to about two times improvement in strain performance. The fabricated variable capacitor shows that the tuning range is varied 100.9 to 111.2 nF with control voltage ranging from 0 to 1 V.
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