Abstract
A method for measuring of internal quantum efficiency of InGaN-based light-emitting diode is presented. The method consists in measuring the emission power and 3dB frequencies of the LED electroluminescence at two low currents corresponding to the range of growth of the quantum efficiency of the LED, and calculating the value of the internal quantum efficiency according to the corresponding functional dependence. To determine the internal quantum efficiency at other current values, the current dependence of the external quantum efficiency is measured and the coefficient of emission extraction from the structure is calculated from the results of measurements of the internal and external quantum efficiency at a low current. The reliability of the measurement method is confirmed by comparing the measurement results with the results obtained by a known measurement method. The relative difference in measurement results is within 3%.
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