Получение заданных электрофизических характеристик слоев In0,01Ga0,99As: (Zn и Si) солнечных элементов в процессе эпитаксии из газовой фазы

Abstract

The paper presents the results of studying the electrophysical characteristics (conductivity and concentration of the main charge carriers) of In0.01Ga0.99As layers of the middle cascade and other structural parts of the space-based InGaP/InGaAs/Ge solar cell depending on the doping type and level specified during epitaxial growth from the gas phase by varying the supply parameters of the sources of Si and Zn impurities. The studies were performed using X-ray diffractometry, non-contact conductivity measurement, electrochemical C–V profilometry, van der Pau method (Hall effect). A linear dependence of the main charge carrier concentration in the layer on the fraction of the doping precursor in the gas mixture was confirmed. The proportionality coefficients were determined for silicon and its disilane precursor, for zinc and its dimethylzinc precursor. The results of the dopant distribution uniformity study are shown and discussed as well as the assumptions about the effects of the temperature field gradient and the stress state in the layer and substrate.