Abstract
I−V characteristics obtained on Ge2Sb2Te5 thin films in the current mode were studied. The effect of multilevel recording was established upon sequentially applying to the sample current pulses with increasing maximum value. It was shown that this effect can be associated with expansion of the memory channel. An estimate of the channel size is obtained. It is concluded that Ge2Sb2Te5 films can be used as a memristor.
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