Abstract
AbstractThe photoluminescence spectra of epitaxial n ^+-Ge:P/Si(001) structures are studied. The structures are grown by hot-wire chemical vapor deposition and doped with phosphorus to the maximum electron concentration 1 × 10^20 cm^–3 from a source based on thermally decomposed GaP. The effects of the doping level and rapid thermal annealing of n ^+-Ge:P layers on the photoluminescence spectra are studied. It is demonstrated that the epitaxial n ^+-Ge:P/Si(001) layers grown by hot-wire chemical vapor deposition are promising for application as active regions of light-emitting optoelectronic devices operating in the near-infrared spectral region.
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