Abstract
The interaction between a+c-type and a-type dislocations in thick (up to 14 µm) semipolar GaN layer grown by hydride vapor phase epitaxy on a 3C SiC/Si(001) template has been detailed investigated by means of transmission electron microscopy. It is shown, that the expansion of a dislocation half loop with Burgers vector b=1/3<1-210> during cooling process can be blocked by its reaction with a threading dislocation with b=1/3<1-210> to form a dislocation segment with b=<0001>. This dislocation reaction is discussed in terms of the energy relaxation. The approximation estimate made within the linear tension approach gives the total energy gain ~7.6 eV/Å (that is, in general, ~45.6 keV for the observed screw dislocation segment of length 600 nm formed as a result of the reaction). Using the core energy calculations, the dislocation core contribution was also estimated as ~19.1 keV.
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