Abstract
Development of lift-off technique of AlGaAs/GaAs heterostructures, grown by the MOCVD technique, to GaAs carrier-substrate using silver-containing paste or Au-In compound has been carried out. Forming process of frontal ohmic contact to GaAs n-type conductivity based on contact systems Au(Ge)/Ni/Au and Pd/Ge/Au with specific contact resistivity 2-5·10-6 Ом·см2 has been investigated. Analyzed was the influence of heterostructure lift-off technique and forming process of frontal ohmic contact on the IR light-emitting diodes parameters: minimum light-emitting diodes (1mm2 square) series resistance was 0.16 Ohm. Optical power 270 mW at current 1.5A has been achieved.
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