Abstract
This paper describes the crystallinity, growth rate, and surface morphology of single crystalline 3C-SiC (cubic silicon carbide) thin films grown with several carbonization conditions such as temperature, flow rate, time. In case of carbonization, an increase in the carbonization temperature caused a increase in the size and numbers of unsealed void (big black spot) which decrease the crystallinity. In addition, optimal flow rate made carbonization layer form well and prevented the formation of voids. Also, after a period of time, the growth of carbonization layer did not increase no more. The single crystalline 3C-SiC thin films on optimal carbonized Si substrate showed an improvement on the crystallinity, the growth rate, the roughness, and the carrier concentration.
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