Abstract
The experimental conditions that allowed specifying a mechanism of the electric inhomogeneity formation of the TlGaSe2 crystal are described. Evolution of abnormal reaction of a crystal on photoexcitation is investigated and interpretation of the basic processes that ones determining the signal dynamics is offered. It is shown the dominating contribution photogalvanic эдс in development of the anomalies and a formation of electric inhomogeneity of a crystal. The participation of deep level defects as centers of a charge localization in formation of electric inhomogeneity of the ferroelectric - semiconductor layered crystal is considered also.
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