Abstract
A fast switching thyristor with a superior trade-off property between the on-state voltage drop and the turn-off time could be fabricated by the proton irradiation method. After making symmetric thyristor dies with a voltage rating of 1,600 V from 350 <TEX>$\mu$</TEX>m thickness of 60 <TEX>$\Omega$</TEX>ㆍcm NTD-Si wafer and 200 <TEX>$\mu$</TEX>m width of n-base drift layer, the local carrier lifetime control by the proton irradiation was performed with help of the HI-13 tandem accelerator in China. The thyristor samples irradiated with 4.7 MeV proton beam showed a superior trade-off relationship of <TEX>$V_{TM}$</TEX> = 1.55 V and <TEX>$t_{q}$</TEX> = 15 <TEX>$\mu$</TEX>s attributed to a very narrow layer of short carrier lifetime(～1 <TEX>$\mu$</TEX>s) in the middle of its n-base drift region. To explain the small increase of <TEX>$V_{TM}$</TEX> , we will introduce the effect of carrier compensation at the low carrier lifetime region by the diffusion current.ffusion current.t.
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