Abstract
A silicon-based photodetector containing two identical n+-p photodiodes is described. One of the photodiodes had a wide spectral response with high sensitivity in the ultraviolet region. The sensitivity of the second was reduced in the short-wavelength part of the spectrum by creating additional recombination centers in the near-surface region by implanting As ions. The spectral sensitivity of the differential signal obtained by subtracting photocurrents had a pronounced short-wavelength characteristic. The long-wavelength limit of the spectral range in terms of the λ0.5 level, depending on the doping dose, was in the range of 0.37 — 0.47 μm. The sensitivity maximum corresponded to λmax=0.32 — 0.37 μm. The electrical and noise characteristics of the photodetector are given. The possibility of using differential photodetectors as two-color ones is shown.
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