Abstract
The development of high frequency ultrasonic transducer is crucial for detecting cracks or internal defects of some materials such as semiconductors, PCBs, and display panels with a size of few microns for the scanning acoustic microscopy (SAM) system. In this study, high frequency ultrasonic transducer was fabricated with a 13 μm thick ZnO film deposited on a sapphire substrate by DC sputtering machine. Ultrasonic transducer with 100 MHz center frequency, -6 dB bandwidth of 21% and the insertion loss of -68 dB was designed for the SAM system. Experimental results show that high frequency ultrasonic transducer device may have potential for high resolution application of nondestructive test and can be applied for various acoustic imaging system such as photoacoustic imaging in the future.
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