Локализация носителей заряда в квантовых ямах InGaN/GaN, ограниченная объемным зарядом

Abstract

The mechanism of carrier tunneling through the potential walls of InGaN/GaN quantum well in the p-n structures is studied by means of the deep center tunneling spectroscopy. A number of humps on the current and photocurrent tunneling spectra, as well as on the forward bias dependences of the intensity and the peak energy of photoluminescence band from the quantum well are detected. These findings allow us to propose a model of carrier localization in the quantum well that permit to relate the tunneling transparency of the potential walls of the QW to the space-charge of deep-level centers in the quantum well barriers and its changes under optical excitation and forward biasing of p-n structure.