Abstract
The effect of ion-plasma treatment on the physical properties of the surface of GaTe crystals is investigated. Gallium telluride crystals were grown by vertical zone melting under the pressure of an inert argon gas of 10.0 MPa at a temperature of 1000 °C and a zone displacement velocity of 9 mm/hr. The treatment was carried out in argon plasma in a high-density low-pressure radio frequency (RF) inductively coupled plasma reactor at an argon ion energy of 100-200 eV for 15-120 s. Using scanning electron microscopy methods, it was shown that the formation of nano- and submicron structures of various architectures (nanohillocks, nanocones, droplet structures) occurred on the surface during processing. It is shown that the sputtering processes are accompanied by enrichment of the near-surface layer with metal atoms and a decrease in oxygen content. The formation of nano- and submicron gallium droplets on the surface has been proved by X-ray diffractometry. The analysis of the raman scattering spectra showed a decrease in the oxide phases of tellurium after plasma treatment. It is established that modification of the GaTe surface leads to suppression of specular optical reflection in the range of 0.4-6.2 eV.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
