Abstract
When doping gallium antimonide with 2 at.% Mn, it was found that, as a result of quenching of the melt, manganese segregates on grain-forming dislocations of the crystalline GaSb (111) texture in the form of microinclusions based on the ferromagnetic compound MnSb. Manganese atoms segregate on GaSb dislocations discretely with periodic spacing of inclusions from each other. The dimensions of the inclusions are of the order of 1 μm, they differ in composition and magnetic properties, but on average their composition and properties correspond to the ferromagnetic phase Mn1,1Sb. At T = 4 K, the crystalline anisotropy of GaSb <Mn> is accompanied by magnetic anisotropy; at T = 300 K, spherical clusters of a magnetic semiconductor retain the properties of a soft magnetic ferromagnet with a coercive force Hc ≈ 10 E.
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