Abstract
AbstractThe electrical properties and photoluminescence features of uniformly Si-doped GaAs layers grown on GaAs substrates with the (100) and (111)A crystallographic orientations of the surface are studied. The samples are grown at the same As_4 pressure in the growth temperature range from 350 to 510°C. The samples grown on GaAs(100) substrates possess n -type conductivity in the entire growth temperature range, and the samples grown on GaAs(111)A substrates possess p -type conductivity in the growth temperature range from 430 to 510°C. The photoluminescence spectra of the samples exhibit an edge band and an impurity band. The edge photoluminescence band corresponds to the photoluminescence of degenerate GaAs with n - and p -type conductivity. The impurity photoluminescence band for samples on GaAs(100) substrates in the range 1.30–1.45 eV is attributed to V _As defects and Si_As– V _As defect complexes, whose concentration varies with sample growth temperature. Transformation of the impurity photoluminescence spectra of the samples on GaAs(111)A substrates is interpreted as being a result of changes in the V _As and V _Ga defect concentrations under variations in the growth temperature of the samples.
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