Abstract
During the powerful picosecond optical pumping of a thin (~ 1 µm) GaAs layer, a stimulated intense (up to 1 GW/cm^2) picosecond emission appeared. As was found, for a fixed density of the pump pulse energy, with an increase of its diameter the characteristic picosecond time τr of the emission and carrier density n relaxation increases. Due to interrelation of the density and the temperature of the carriers at high-intensity emission (in the saturation state of the emission amplification), time τr is associated with the characteristic temperature relaxation time τT of the photo-pumped carriers, which was determined earlier theoretically with the emission-caused carrier heating taken into account. The corresponding analytical expressions for τr as a functions of τT are consistent with the above experimental results.
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