Abstract
It is shown that the formation of GaAlAs nanofilms on the GaAs surface leads to an increase in the value of the emission coefficient of true secondary electrons and of the quantum yield of photoelectrons, which is explained by the difference in the depth of the exit zone of true secondary electrons for GaAs and GaAlAs.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
