Особенности интерфейса устройства тестового диагностирования памяти DDR SDRAM

Abstract

The I/О synchronization scheme plays an important role in achieving maximum speed and reliability of data transmission during memory operation. This paper presents the interface architecture of the DDR SDRAM test diagnostic device. It was demonstrated that the proposed interface components provide the formation of a bidirectional synchro signal for gating written and read data when performing test diagnostics of chips and DDR SDRAM memory devices. Compared to traditional methods, the proposed interface components were made on integrated electronic elements, which reduced the size and power consumption. It has been established that the use of a multiphase synchronization system to implement the interface eliminated the use of delay lines, the disadvantages of which are large dimensions and the complexity of changing the delay time. The interface components under consideration are intended for use in test diagnostics devices that have a multiprocessor structure, which increases the speed of forming test actions and reference reactions. The performed functional modeling and debugging of strobe signal generators confirmed the feasibility of the designs. The proposed interface of the test diagnostics device allows performing test diagnostics of modern high-speed chips and semiconductor memory modules at the operating frequency, which increases the reliability of the results obtained. Interface components can be used by manufacturers of test diagnostics tools for modern high-speed storage devices.