이온 주입과 기판 온도 효과에 의한 Al-1%Si 박막의 Hillock 형성 특성

Abstract

As packing density in integrated circuits increases, multilevel metallization process has been widely used. But hillock formed in the bottom layers of aluminum are well known to make interlayer short in multilevel metallization. In this study, the effects of ion implantation to the metal film and deposition temperature on the hillock formation were investigated. The Al-1%Si thin film of <TEX>$1{\mu}m$</TEX> thickness was DC sputtered with substrate (<TEX>$SiO_2/Si$</TEX>) temperature of <TEX>$20^{\circ}C$</TEX>, <TEX>$200^{\circ}C$</TEX>, and <TEX>$400^{\circ}C$</TEX>, respectively. Ar ions (<TEX>$1{\times}10^{15}cm^{-2}$</TEX>: 150 keV) and B ions (<TEX>$1{\times}10^{15}cm^{-2}$</TEX>, 30 keV, 150 keV) were implanted to the Al-Si thin film. The deposited films were evaluated by SEM, surface profiler and resistance measuring system. As a results, Ar implanting to Al-Si film is very effective to reduce hillock size in the metal deposition temperature below than <TEX>$200^{\circ}C$</TEX>, and B implanting to an Al-Si film is effective to reduce hillock density in the high temperature deposition conditions around <TEX>$400^{\circ}C$</TEX>. Line width less than <TEX>$3{\mu}m$</TEX> was free of hillock after alloying.