Abstract
Investigated are IR light-emitting diodes with 850 nm radiation wavelength, based on AlGaAs/GaAs heterostructures grown by the method of MOC-hydride epitaxy with a Bragg reflector and additional “reflecting” layer Al0.9Ga0.1As, which ensures the decrease of optical losses of the generated radiation. Developed is the post growth technology for forming frontal ohmic contacts and for texturing the light-emitting surface, which ensures the decrease of ohmic losses and the increase of the radiation extraction efficiency from a crystal. External quantum efficiency of light-emitting diodes with two internal reflectors and surface texturing exceeded 9% at the current range 0.1-1.4A
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