Abstract
In this work we investigated thin films of solid solutions based on the three-dimensional Dirac semimetal Cd3As2 with Mn. The Cd3-xMnxAs2 (x = 0, 0.05 и 0.1) films with thickness around 50 – 70 nm were synthesized on sitall substrates via vacuum thermal evaporation of Mn-doped cadmium arsenide ingots, obtained by the direct melting of components in vacuum ampoules. We measured temperature and magnetic field dependences of films resistivity and defined corresponding transport parameters. Films with x = 0 and 0.05 exhibited positive magnetoresistance with characteristic form, corresponding to the contribution of weak antilocalization effect. At higher Mn content (x = 0.1) we observed the contribution of weak localization effect. Such change of the quantum correction type, in case of topological semimetals, suggest the transformation of the band structure and transition from the Dirac semimetal state into trivial phase, which, in our case, corresponds to the critical Mn content of about xc ~ 0.07.
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