Abstract
Spatial distribution of luminescence characteristics of CVD-ZnSe doped with Aluminum and both Aluminum and Iron by thermal diffusion were studied. The diffusion method leads to formation of two areas in crystal volume: (1) area with high aluminum concentration in which the luminescence of defective-impurity centers (DICs) dominates and exciton luminescence is absent and (2) area with low aluminum concentration in which exciton luminescence dominates. The border of two areas recognized on luminescence map is sharp that not corresponded to diffusion nature. The result is explained by assuming the anomalous nature of aluminum diffusion, leading to a sharp change in the aluminum concentration at a certain distance from the doping surface. Method of aluminum doping process applied in present paper leaded to weakens of well-known luminescence suppression effect by iron ions in ZnSe.
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