Abstract
This paper describes the fabrication and characteristics of ceramic thin film type pressure sensors based on Ta-N strain gauges for high temperature applications. Ta-N thin-film strain gauges are deposited onto a thermally oxidized Si diaphragm by RF sputtering in an argon-nitrogen atmos[here(<TEX>$N_2$</TEX> gas ratio: 8%, annealing condition: 90<TEX>$0^{\circ}C$</TEX>, 1 hr.), patterned on a wheatstone bridge configuration, and used as pressure sensing elements with a high stability and a high gauge factor. The sensitivity is 1.097 ～ 1.21 mV/Vㆍkgf/<TEX>$\textrm{cm}^2$</TEX> in the temperature range of 25 ～ 200 <TEX>$^{\circ}C$</TEX> and the maximum non-linearity resistance), non-linearity than existing Si piezoresistive pressure sensors. The fabricated ceramic thin-film type pressure sensor is expected to be usefully applied as pressure and load sensors that os operable under high-temperature.
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