Abstract
사불화탄소(<TEX>$CF_4$</TEX>)는 반도체 제조공정에서 에칭과 반응기 세척에서 사용되어온 가스이다. <TEX>$CF_4$</TEX>는 적외선을 강하게 흡수하고 대기 중 잔류시간이 길어서 지구온난화에 영향을 미치기 때문에 고효율의 분해가 필요하다. 본 연구에서는 플라즈마와 워터젯을 결합하여 워터젯 글라이딩 아크 플라즈마 시스템을 개발하고, 이를 이용하여 <TEX>$CF_4$</TEX>를 고효율로 분해할 수 있도록 방전영역을 증가시키고 다량의 OH 라디칼을 생성시킬 수 있는 최적의 조업 조건을 결정하였다. 공정 실험 변수로는 워터젯 주입량, <TEX>$CF_4$</TEX> 초기 농도, 전체 가스량과 주입에너지량(SEI : Specific energy input)을 선정하였다. 변수실험을 통하여 워터젯 주입량이 25.5 mL/min, <TEX>$CF_4$</TEX> 초기 농도 2.2%, 전체 가스량 9.2 L/min, SEI 7.2 kJ/L일 때 <TEX>$CF_4$</TEX> 분해율은 최고 97%까지 도달하였다. Tetrafluoromethane(<TEX>$CF_4$</TEX>) has been used as etching and chamber cleaning gases for semiconductor manufacturing processes. These gases need to be removed efficiently because of their strong absorption of infrared radiation and long atmospheric lifetime which causes the global warming effect. We have developed a waterjet gliding arc plasma system in which plasma is combined with waterjet and investigated optimum operating conditions for efficient <TEX>$CF_4$</TEX> destruction through enlarging discharge region and producing large amount of OH radicals. The operating conditions are waterjet flow rate, initial <TEX>$CF_4$</TEX> concentration, total gas flow rate, specific energy input. Through the parametric studies, the highest <TEX>$CF_4$</TEX> destruction of 97% was achieved at 2.2% <TEX>$CF_4$</TEX>, 7.2 kJ/L SEI, 9 L/min total gas flow rate and 25.5 mL/min waterjet flow rate.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.