Abstract
This paper considers the optoelectronic properties of porous nanostructured silicon obtained by electrochemical etching method. It was noted that the electrolyte concentration affects the depth of porosity, while the anodizing current density affects the density and size of crystallites, as well as the photoluminescence spectra. The results of the Raman measurement showed a low-frequency shift of the wavenumber on the 504 cm-1 line, which changes the frequency difference Δω to 16 cm-1 wavenumber units, while the cross-sectional diameter of the nanocrystallites is distributed from 2.3 nm to 4.3 nm.
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