Abstract
A non-thermal photoinduced semiconductor-metal phase transition occurring over a time Δt <1ps in a vanadium dioxide film on an aluminum substrate is theoretically investigated. It is shown that under the action of a short laser pulse in the VO2 film a structure of metal and semiconductor layers parallel to the substrate is formed. The dependence of the layer thickness on the energy density W of the laser pulse is obtained. A diagram is constructed that determines the number of layers depending on the energy density W of the laser pulse and the thickness a of the film. A comparison with experimental data is made.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
