Abstract
광대역 이득 특성을 얻기 위한 InGaAsP-InP 응력보상 비대칭 다중 양자우물(Asymmetric Multiple Quantum Well, AMQW) 구조를 성장하고, Ridge Waveguide Laser Diodes(RWG-LDs)를 제작하였다. 제작 후 소자의 동작변수와 모드 이득을 측정하였으며, 얻어진 결과를 비교, 분석하였다. 외부 공진기형 구조에서 넓고 평탄한 이득특성을 얻기 위해 한쪽 단면에 Anti-Reflection(AR) 코팅을 수행하여 AR coated AMQW RWG LD의 이득특성을 분석하였다. Asymmetric multiple quantum well ridge waveguide laser diodes (AMQW RWG LDs) with a wide and flat gain spectrum were designed and fabricated. The operating parameters and gain spectra were measured and analyzed for uncoated and anti-reflection (AR) coated LDs. For AR coated 500 mm-long RWG LOs, the extremely flat gain spectrum over a spectral range of 90 nm was obtained at the current 75 ㎃.
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