Полупроводниковые технологии для реализации радиационно-стойких СБИС

Abstract

High values of photocurrents associated with instantaneous radiation can cause a transient voltage drop on the power buses, and some circuits are sensitive to currents generated in the element. This can lead to malfunctions ranging from temporary loss of functioning to data loss by memory and even to final damage to the product. The library elements are accessed at several levels of radiation, as for the design of elements, options for special simulation modeling and methods for creating topology. The article discusses the technologies of radiation-resistant ICS, their effectiveness on silicon-on-insulator structures, compared with a similar scheme on bulk silicon with the same design standards. Radiation-resistant semiconductor specialized devices with increased radiation resistance are also considered. Special attention is paid to the technology of implementation of radiation-resistant semiconductor storage devices. In relation to radiation-resistant logic devices, two directions are considered: the use of specialized logic circuits and user-programmable gate arrays.