Abstract
탄소계열의 SiOC 박막은 화학적 증착방법으로 bistrimethylsilylmethane와 산소의 혼합개스를 사용하여 증착하였다. SiOC 박막의 화학적인 특성은 FTIR 분석을 이용하였으며, I-V 측정법을 이용하여 비교하였다. <TEX>$950\sim1200\;cm^{-1}$</TEX> 영역에서 생기는 결합들은 Si-C 결합, Si-O-C 결합과 Si-O 결합으로 이루어졌으며, SiOC 박막의 누설전류는 탄소함량이 증가함에 따라서 증가하였다. 그리고 누설전류는 Si-O-C 결합의 함량과 유사한 경향성을 나타냈다. FTIR 분석에서 디컨벌류션한 데이터는 SiOC 박막이 3가지 특성이 있는 것을 확인할 수 있었으며, 접촉각은 이러한 3가지 유형에 대한 차이점을 보여주었다. The SiOC film of carbon centered system was prepared using bistrimethylsilylmethane and oxygen mixed precursor by the chemical vapor deposition. The chemical properties of the SiOC film were analyzed by the I-V measurement and FTIR spectra analysis. The main bond of <TEX>$950{\sim}1200cm^{-1}$</TEX> was composed of the Si-C, Si-O-C and Si-O bonds. The leakage current of the SiOC film increased with the increasing of the carbon content, and the drift of the current was in proportion to the Si-O-C bond content. The deconvoluted data of FTIR spectra could be classified the three types such as organic, hybrid and inorganic types, and the contact angle showed the difference of three types.
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