Дослідження застосувань нанотекстурованого сапфіру як темплету при MOCVD-гетероепітаксії ІІІ-нітридів

Abstract

It is considered some applications of nano-textured sapphire templates with MOCVD- III-nitride hetero-structure, namely its suitability for use in UV photodiodes and for energy storage layers, as ideally suited through its high thermal, chemical and radiation resistance due to the strong bond between nitrogen and group III atoms for space, biological, and military integrated circuits, where traditional silicon does not fit.Thermodynamic parameters (temperature, pressure) and precursors have been experimentally determined during the process of MOCVD for the creation of the nano-templates with a radius of nanopores (<10 nm), when treating the sapphire surface in a stream of ammonia under certain conditions (installation of MOCVD EPIQUIP, horizontal reactor, temperature 1050 °C, pressure 20 mbar, for 20 minutes for the formation of low-defective heteroepitaxial layers of III-nitrides. In particular, it provides a low threading dislocation density (~5?106??????–2) for p-GaN layers which is a less costly process than ELOG (epitaxial lateral overgrowth). The density of dislocations, which are the centers of non-radiation recombination for layers of p-GaN, was determined on the basis of the diffusion length of no equilibrium carriers by the method of currents induced by an electron beam. It has been shown that the UV GaN Schottky photodiodes on such nano-templates had a steeper long-wavelength edge (375–475 nm) of normalized photo-sensitivity compared with photodiodes without them.In the process of MOCVD, the appropriateness of such nano-templates for energy accumulation layers is considered, in particular for the production of super-capacitors, with the formation of lowdefective nitride boron layers in which the graphene can be encapsulated, and for the development of the nanocarbides and consolidated phases of AlCN or BCN on the surface of such nano-templates in the stream of trimethyl aluminum or triethyl boron, respectively. Fig.: 5. Refs: 28 titles.