Abstract
The distributed amplifier is an effective solution for creating broadband amplifiers in wireless communication, pulse and measurement technology. In this study, a distributed amplification amplifier based on GaAs field-effect transistors was developed. The optimal number of amplification cells was determined and a cascaded distributed amplification amplifier with a schematic diagram operating in the range of 2 to 20 GHz was designed. Preliminary calculations of the main characteristics of the amplifier were also performed, and based on them, a model of the distributed amplification amplifier was constructed, which was simulated in CAD. The changes in the gain and output power when compressed by 1 dB depending on the number of amplification cells were analyzed. The results of the study can be used in designing distributed amplification amplifiers for various systems in modern radio electronics.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Proceedings of Tomsk State University of Control Systems and Radioelectronics
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
