Abstract

Presents the results of a study of the influence of gradient inhomogeneity of composition and temperature directed along the cleavage plane of varizon crystals of the Bi100-C-SbC system on the Peltier effect in the composition range corresponding to the semiconductor region of the interval 11 < C <19 at. %. It follows from the data obtained that, for a gradient-inhomogeneous sample in a given antimony concentration range at optimal current, the Peltier cooling value is significantly greater with co-directional gradients of temperature and band gap width than in the case when these gradients are oppositely directed. This means that the polarity effect of the Peltier phenomenon is clearly manifested.

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